FDC2612 mosfet equivalent, n-channel mosfet.
* 1.1 A, 200 V. RDS(ON) = 725 mW @ VGS = 10 V
* High Performance Trench Technology for Extremely Low RDS(ON)
* High Power and Current Handling Capability
.
* DC/DC Converter
DATA SHEET www.onsemi.com
VDSS 200 V
RDS(ON) MAX 725 mW @ 10 V
ID MAX 1.1 A
DDS D DG
TSOT23 6.
This N−Channel MOSFET has been designed specifically to
improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS(ON) and fast switching s.
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